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| Si9435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = -10 V -30 0.055 @ VGS = -6 V 0.070 @ VGS = -4.5 V FEATURES ID (A) -5.7 -5.0 -4.4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) Si9435BDY--E3 (Lead (Pb)-Free) Si9435BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D D P-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State -30 "20 Unit V -5.7 -4.6 -30 -2.3 2.5 1.6 -55 to 150 -4.1 -3.2 A -1.1 1.3 0.8 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 24 Maximum 50 95 30 Unit _C/W C/W Document Number: 72245 S-50153--Rev. C, 31-Jan-05 www.vishay.com 1 Si9435BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS ID( ) D(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 70_C VDS v -10 V, VGS = -10 V VDS v -5 V, VGS = -4.5 V VGS = -10 V, ID = -5.7 A Drain-Source On-State Resistanceb rDS(on) VGS = -6 V, ID = -5 A VGS = -4.5 V, ID = -4.4 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = -15 V, ID = -5.7 A IS = -2.3 A, VGS = 0 V -20 -5 0.033 0.043 0.056 13 -0.8 -1.1 0.042 0.055 0.070 S V W -1.0 -3.0 "100 -1 -5 V nA mA Symbol Test Condition Min Typa Max Unit On-State On State Drain Currentb A Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1.2 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W 15 ID ^ -1 A, VGEN = -10 V, Rg = 6 W VDS = -15 V, VGS = -10 V, ID = -3.5 A 16 2.3 4.5 8.8 14 14 42 30 30 25 25 70 50 60 ns W 24 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72245 S-50153--Rev. C, 31-Jan-05 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 25 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 4V 30 5V 25 20 15 10 TC = 125_C 5 3V 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 25_C Transfer Characteristics -55_C On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 1100 Capacitance C - Capacitance (pF) 0.12 880 Ciss 660 0.09 VGS = 4.5 V 0.06 VGS = 6 V 440 Coss Crss 0 0.03 VGS = 10 V 220 0.00 0 4 8 12 16 20 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 3.5 A rDS(on) - On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.7 A 8 6 1.2 4 1.0 2 0.8 0 0.0 3.2 6.4 9.6 12.8 16.0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 72245 S-50153--Rev. C, 31-Jan-05 TJ - Junction Temperature (_C) www.vishay.com 3 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.20 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.16 I S - Source Current (A) 0.12 ID = 5.7 A 0.08 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 150 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) 120 ID = 250 mA Power (W) 90 0.2 0.0 60 -0.2 30 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Foot *Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s dc 0.1 TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com Document Number: 72245 S-50153--Rev. C, 31-Jan-05 4 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72245. Document Number: 72245 S-50153--Rev. C, 31-Jan-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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